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| RLS-73 Diodes Switching diode RLS-73 !Applications High speed switching !External dimensions (Units : mm) 1.40.1 !Features 1) Small surface mounting type. ( LLDS ) 2) High speed. (trr=1.2ns Typ.) 3) High reliability. CATHODE BAND (YELLOW) 0.4 0.4 +0.2 3.4 -0.1 1.5Max. !Construction Silicon epitaxial planar ROHM : LLDS EIAJ : - JEDEC : LL-34 !Absolute maximum ratings (Ta=25C) Paramater Peak reverse voltage DC reverse voltage Peak forward current Mean rectifying current Surge current (1s) Power dissipation Junction temperature Storage temperature Symbol VRM VR IFM IO Isurge P Tj Tstg Limits 90 80 400 130 600 300 175 -65+175 Unit V V mA mA mA mW C C !Electrical characteristics (Ta=25C) Parameter Forward voltage Reverse current Capacitance between terminals Reverse recovery time Symbol VF IR CT trr Min. - - - - Typ. - - - - Max. 1.2 0.5 2 4 Unit V A pF ns IF=100mA VR=80V VR=0.5V, f=1MHz VR=6V, IF=10mA, RL=50 Conditions RLS-73 Diodes !Electrical characteristic curves (Ta=25C) CAPACITANCE BETWEEN TERMINALS : CT (pF) 100 FORWARD CURRENT : IF (mA) 1m 3.0 f=1MHz 2.5 2.0 1.5 1.0 0.5 0 0 50 20 10 5 2 Ta=12 5C 25C -25C REVERSE CURRENT : IR (nA) 0.1m 10 Ta=125C 1 Ta=75C 100n Ta=-25C 1 0.5 0.2 0 75C 10n 1n 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 20 40 60 80 100 120 140 5 10 15 20 25 30 FORWARD VOLTAGE : VF (V) REVERSE VOLTAGE : VR (V) REVERSE VOLTAGE : VR (V) Fig. 1 Forward characteristics Fig. 2 Reverse characteristics Fig. 3 Capacitance between terminals characteristics 5 10 REVERSE RECOVERY TIME : trr (ns) 4 SURGE CURRENT : Isurge (A) VR = 6V Irr = 1/10IR 5 PULSE Single pulse 2 1 0.5 3 2 1 0.2 0.1 0.01 0 0 4 8 12 16 20 0.1 1 10 100 1000 FORWARD CURRENT : IF (mA) PULSE WIDTH : Tw (ms) Fig. 4 Reverse recovery time characteristcs Fig.5 Surge current characteristics 0.01F D.U.T. 5k PULSE GENERATOR OUTPUT 50 50 SAMPLING OSCILLOSCOPE Fig.6 Reverse recovery time (trr) measurement circuit |
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